Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2164432
Reference14 articles.
1. High dielectric constant oxides
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3. Energy-band diagram of metal/Lu2O3/silicon structures
4. Band alignment between (100)Si and complex rare earth∕transition metal oxides
5. Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon
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