Low temperature and selective growth of β‐SiC using the SiH2Cl2/i‐C4H10/HCl/H2gas system
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103611
Reference7 articles.
1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
2. Chemically-formed buffer layers for growth of cubic silicon carbide on silicon single crystals
3. Epitaxial growth of β-SiC single crystals by successive two-step CVD
4. ‘‘Buffer‐layer’’ technique for the growth of single crystal SiC on Si
5. Low‐temperature and selective growth of β‐SiC using the SiH2Cl2/C3H8/H2/HCl gas system
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1. Nanocrystalline silicon carbide thin films by fluidised/packed bed chemical vapor deposition using a halogen-free single source;Journal of Materials Chemistry;2012
2. Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications;Chemical Reviews;2011-12-02
3. Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition;Springer Handbook of Crystal Growth;2010
4. Selective epitaxy and lateral overgrowth of 3C-SiC on Si – A review;Progress in Crystal Growth and Characterization of Materials;2005-01
5. Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask;Materials Science Forum;2004-06
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