Electrical characteristics of Ta2O5 thin films deposited by electron beam gun evaporation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125166
Reference13 articles.
1. Photo-Process of Tantalum Oxide Films and Their Characteristics
2. Leakage-current reduction in thin Ta/sub 2/O/sub 5/ films for high-density VLSI memories
3. UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs
4. Structural and electrical characterization of TiO2 grown from titanium tetrakis-isopropoxide (TTIP) and TTIP/H2O ambients
5. Leakage current and electrical breakdown in metal‐organic chemical vapor deposited TiO2 dielectrics on silicon substrates
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1. Multifractal and optical bandgap characterization of Ta2O5 thin films deposited by electron gun method;Optical and Quantum Electronics;2020-01-29
2. Improved Amorphous Indium Gallium Zinc Oxide Thin Film Transistors by Low Power RF-Sputtering Deposition Using Ta2O5 Dielectric;Nanoscience and Nanotechnology Letters;2015-03-01
3. Dielectric and structural properties of iron doped titanate nano-composites;2007 International Workshop on Physics of Semiconductor Devices;2007-12
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