Photoionization cross section of electron traps in thin oxynitride films of metal‐oxynitride‐oxide‐silicon devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343012
Reference21 articles.
1. Steady‐state electron and hole space charge distribution in LPCVD silicon nitride films
2. Valence alternation pair model of charge storage in MNOS memory devices
3. Analyses for stoichiometry and for Hydrogen and Oxygen in silicon nitride films
4. Effects of oxide thickness on charge trapping in metal‐nitride‐oxide‐ semiconductor structures
5. Characterization of current transport in MNOS structures with complementary tunneling emitter bipolar transistors
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1. Structural and electric properties of ultrathin SiOxNy layers with posttreatment in N2 plasma;Journal of Applied Physics;2004-12
2. Structural Properties of Ultrathin Amorphous Silicon Oxynitride Layers;Japanese Journal of Applied Physics;2003-06-15
3. Evidence of the enhanced resonant tunneling effect in a triple-barrier heterostructure;Superlattices and Microstructures;2001-01
4. The Combined Effect of Hydrogen and Oxygen Impurities in the Silicon Nitride Film of MNOS Devices;Journal of The Electrochemical Society;1992-03-01
5. Photoinduced paramagnetic centers in amorphous silicon oxynitride;Journal of Applied Physics;1991-11
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