Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1805191
Reference26 articles.
1. Improved performance of MBE grown quantum-dot lasers with asymmetric dots in a well design emitting near 1.3μm
2. Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers
3. Characterization of InAs quantum dots in strained In[sub x]Ga[sub 1−x]As quantum wells
4. Characterization of rapid-thermal-annealed InAs/In0.15Ga0.85As dots-in-well heterostructure using double crystal x-ray diffraction and photoluminescence
5. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
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