Ultrathin n+∕p junction in preamorphized silicon by phosphorus and carbon coimplantation engineering: Influence of C location
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2811726
Reference13 articles.
1. Optimization of advanced PMOS junctions using Ge, B and F co-implants
2. Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon
3. Suppression of phosphorus diffusion by carbon co-implantation
4. Effects of germanium and carbon coimplants on phosphorus diffusion in silicon
5. Interstitial Defect Reactions in Silicon
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1. Anomalous rapid diffusion of phosphorus caused by heavily implanted carbon in pre-amorphized ultrashallow junctions;Vacuum;2017-06
2. Improvement of the short channel effect in PMOSFETs using cold implantation;Materials Research Bulletin;2016-10
3. (Invited) The (R)Evolution of the Junctionless Transistor;ECS Transactions;2016-05-04
4. Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements;Japanese Journal of Applied Physics;2016-01-05
5. Metastable Activation of Dopants by Solid Phase Epitaxial Recrystallisation;Subsecond Annealing of Advanced Materials;2014
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