GaN thin films by growth on Ga-rich GaN buffer layers-Reference-Cited by-同舟云学术

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GaN thin films by growth on Ga-rich GaN buffer layers

Published:2000-11-15 Issue:10 Volume:88 Page:6032-6036
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kim Yihwan,Subramanya Sudhir G.,Siegle Henrik,Krüger Joachim,Perlin Piotr,Weber Eicke R.,Ruvimov Sergei,Liliental-Weber Zuzanna

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1319162

Reference22 articles.

1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

2. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

3. Strain-related phenomena in GaN thin films

4. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

5. GaN Growth Using GaN Buffer Layer

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessing the Stress Induced by Novel Packaging in GaN HEMT Devices via Raman Spectroscopy;Applied Sciences;2024-05-16

2. Downstream Electric Field Effects during Film Deposition with a Radio Frequency Plasma and Observations of Carbon Reduction;Coatings;2022-10-19

3. Effect of interface nucleation time of the GaN nucleation layer on the crystal quality of GaN film;Acta Physica Sinica;2015

4. Stress distribution in GaN nanopillars using confocal Raman mapping technique;Applied Physics Letters;2014-04-14

5. Characterization of GaN/InGaN multiple quantum wells grown on sapphire substrates by nano-scale epitaxial lateral overgrowth technique;Journal of Crystal Growth;2011-03

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