The study about the resistive switching based on graphene/NiO interfaces
Author:
Affiliation:
1. School of Electronics and Information Engineering, Anhui University, Hefei, Anhui 230601, China
2. School of Electronics and Information Engineering, Hefei Normal University, Hefei, Anhui 230601, China
Funder
Nature Science Foundation of the Higher Education Institutions of Anhui Province, China
Research Foundation of Education Bureau of Anhui Province, China
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4991055
Reference52 articles.
1. Controlled synthesis of Ni/CuOx/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching
2. Colloidal Synthesis of Uniform-Sized Molybdenum Disulfide Nanosheets for Wafer-Scale Flexible Nonvolatile Memory
3. Magnetic force microscopy of conducting nanodots in NiO thin films
4. Magnetic force microscopy of conducting nanodots in NiO thin films
5. Voltage-Controlled Cycling Endurance of HfOx-Based Resistive-Switching Memory
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1. Alkali Doping Nickel Oxide Thin Films Using Sol-Gel Spin Coated and Density Functional Theory: Structural and Physical Properties;Russian Journal of Physical Chemistry B;2023-10
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3. First-principles study of bipolar resistive memories based on monolayer α-GeTe;Nanotechnology;2021-08-31
4. The influence of the resistance layer dimension and interface doping on the electrical properties of aGNR/NiO/aGNR-structured resistive random access memory;Materials Research Express;2019-09-13
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