Band gap engineering of ZnSnN2/ZnO (001) short-period superlattices via built-in electric field
Author:
Affiliation:
1. MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi'an Jiaotong University, Xi'an 710049, China
Funder
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4971176
Reference30 articles.
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4. Band offsets between ZnGeN2, GaN, ZnO, and ZnSnN2and their potential impact for solar cells
5. Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule
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