A heuristic approach to determine the modifications of electronic and optical properties of “intrinsic” GaAs under free-carrier injection. Part II
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1935746
Reference25 articles.
1. A heuristic approach to precisely represent optical absorption and refractive index data for photon energies below, at, and above the band gap of semiconductors: The case of high-purity GaAs. Part I
2. BAND‐FILLING MODEL FOR GaAs INJECTION LUMINESCENCE
3. Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers
4. Spontaneous and Stimulated Recombination Radiation in Semiconductors
5. Carrier lifetime measurement for determination of recombination rates and doping levels of III‐V semiconductor light sources
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