Nitridization of gallium arsenide surfaces: Effects on diode leakage currents
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94877
Reference10 articles.
1. Passivation of GaAs surfaces*
2. Photoemission studies of molecular beam epitaxially grown GaAs (001) surfaces exposed to a nitrogen plasma
3. Josephson properties of Nb3Sn/Pb tunnel junctions
4. Reduction of GaAs surface recombination velocity by chemical treatment
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