High-level incorporation of antimony in germanium by laser annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3520671
Reference26 articles.
1. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K
2. Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials
3. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
4. Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETs
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