Microfocus x-ray study of selective area epitaxy of SiGe on Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1527214
Reference15 articles.
1. Measurements of alloy composition and strain in thin GexSi1−xlayers
2. Physical techniques for silicon layer analysis
3. Formation of relaxed SiGe films on Si by selective epitaxial growth
4. Strain relaxation in III–V semiconductor heterostructures
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