Rapid thermal annealing and the anomalous threshold voltage shift of metal‐oxide‐semiconductor structure inn+polycrystalline silicon gate complementary metal‐oxide‐semiconductor technology-Reference-Cited by-同舟云学术

Rapid thermal annealing and the anomalous threshold voltage shift of metal‐oxide‐semiconductor structure inn+polycrystalline silicon gate complementary metal‐oxide‐semiconductor technology

Published:1992-07-27 Issue:4 Volume:61 Page:447-449
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fang Y. K.,Hsieh J. C.,Chen C. W.,Koung C. H.,Tsai N. S.,Lee J. Y.,Tseng F. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.107910

Reference6 articles.

1. Temperature transients in heavily doped and undoped silicon using rapid thermal annealing

2. The influence of free-carrier absorption on the rapid thermal sintering process

3. Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon

4. Improvement of thin-gate oxide integrity using photo-enhanced low-temperature nitridation

5. Anomalous co‐diffusion effects of germanium on group III and V dopants in silicon

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5. Anomalous Current-Voltage Characteristics and Threshold Voltage Shift in Implanted-Polysilicon-Gated Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with/without Titanium-Polycide Technology;Japanese Journal of Applied Physics;1995-08-01