Analytical modeling ofa‐Si:H thin‐film transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339007
Reference7 articles.
1. A simplified model for the static characteristics of amorphous silicon thin-film transistors
2. An accurate CAD model for the ambipolar a-Si: H TFT
3. Theory and interpretation of the field‐effect conductance experiment in amorphous silicon
4. The interface and the field effect in thin‐film transistors
5. Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors
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1. DC characteristic research based on surface potential for a-Si:H thin-film transistor;Acta Physica Sinica;2012
2. Carrier transport in nanocrystalline field-effect transistors: Impact of interface roughness and geometrical carrier trap;Applied Physics Letters;2010-10-11
3. Ambipolar charge carrier transport in mixed organic layers of phthalocyanine and fullerene;Journal of Applied Physics;2007-03-15
4. Influence of distributed trap states on the characteristics of top and bottom contact organic field-effect transistors;Journal of Materials Research;2004-07
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