Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4807500
Reference11 articles.
1. Theoretical study on the electronic structure of (Si)m/(Ge)nsuperlattices
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si
4. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
5. High-quality Ge epilayers on Si with low threading-dislocation densities
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Semiconductor Thin Film Based Metasurfaces and Metamaterials for Photovoltaic and Photoelectrochemical Water Splitting Applications;Advanced Optical Materials;2019-05-27
2. Ultrasmooth epitaxial Ge grown on (001) Si utilizing a thin B-doped SiGe buffer layer;Applied Physics Express;2014-11-01
3. Thin, relaxed Si1−xGex virtual substrates on Si grown using C-doped Ge buffers;Applied Physics Letters;2014-10-13
4. Sputter Epitaxial Growth of Flat Germanium Film with Low Threading-Dislocation Density on Silicon (001);ECS Journal of Solid State Science and Technology;2014
5. Strained-Si/strained-Ge type-II staggered heterojunction gate-normal-tunneling field-effect transistor;Applied Physics Letters;2013-08-26
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