Scanning tunneling microscopy of the GaAs(001) surface morphology prepared by migration enhanced epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355743
Reference15 articles.
1. Atomistic models of interface structures of GaAs-AlxGa1−xAs (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBE
2. Photoluminescence of GaAs quantum wells grown by molecular beam epitaxy with growth interruptions
3. Direct observation of the growth-interruption effect for molecular-beam-epitaxy growth on GaAs(001) by scanning tunneling microscopy
4. Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy
5. New approach to growth of high‐quality GaAs layers on Si substrates
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1. Morphological anisotropy during migration enhanced epitaxy of GaAs;Surface Science;2003-08
2. Stress-induced anisotropy of phosphorous islands on gallium arsenide;Applied Physics Letters;2000-10-02
3. Scanning tunneling microscopy study of GaAs(001) surfaces;Applied Surface Science;1999-03
4. Scanning Tunneling Microscopy Study of GaAs (001) Surfaces Grown by Migration-Enhanced Epitaxy at Low Temperatures;Japanese Journal of Applied Physics;1998-03-15
5. Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces;Progress in Surface Science;1997-10
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