Admittance spectroscopy revisited: Single defect admittance and displacement current
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1617363
Reference7 articles.
1. Chapter 2 Density of States from Junction Measurements in Hydrogenated Amorphous Silicon
2. Studies of the frequency-dependent admittances of Schottky barriers formed on sputtered hydrogenated amorphous silicon
3. Relation between distribution of states and the space‐charge‐region capacitance in semiconductors
4. Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2based heterojunctions
5. Admittance spectroscopy of efficient CuInS2 thin film solar cells
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1. Admittance spectroscopy or deep level transient spectroscopy: A contrasting juxtaposition;Physica B: Condensed Matter;2018-04
2. Data-Handling and Analyzing Criteria;Immittance Spectroscopy;2017-12-22
3. Multi-dimensional admittance spectroscopy;Journal of Applied Physics;2013-01-14
4. Effect of band tail states on the performance of organic solar cells;RSC Advances;2013
5. Point Contact Admittance Spectroscopy of Thin Film Solar Cells;MRS Proceedings;2013
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