Compositional analysis of ultrathin silicon oxynitride gate dielectrics by quantitative electron energy loss spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1633674
Reference8 articles.
1. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
2. High-κ gate dielectrics: Current status and materials properties considerations
3. Growth and characterization of ultrathin nitrided silicon oxide films
4. Gate dielectric metrology using advanced TEM measurements
5. The electronic structure at the atomic scale of ultrathin gate oxides
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1. Effect of bias frequency variation on the characteristics of SiOX thin films deposited by atmospheric pressure chemical vapor deposition using a double discharge system;Thin Solid Films;2013-07
2. Synthesis and characterization of N-rich single crystalline SiOxNy nanowires with three-dimensional branches;Applied Physics Letters;2009-06-08
3. SiOxNy thin film deposited by plasma enhanced chemical vapor deposition at low temperature using HMDS–O2–NH3–Ar gas mixtures;Surface and Coatings Technology;2007-02
4. Characteristics of SiOxNy films deposited by inductively coupled plasma enhanced chemical vapor deposition using HMDS/NH3/O2/Ar for water vapor diffusion barrier;Thin Solid Films;2006-11
5. Properties of SiO N thin film deposited by low temperature plasma enhanced chemical vapor deposition using TEOS–NH3–O2–N2 gas mixtures;Surface and Coatings Technology;2005-10
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