A comparative study of Si‐ and GaAs‐based devices for repetitive, high‐energy, pulsed switching applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350915
Reference21 articles.
1. Semiconductors for high‐voltage, vertical channel field‐effect transistors
2. Optimum semiconductors for high-power electronics
3. Space-Charge Limited Emission in Semiconductors
4. GaAs microwave MOSFET's
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1. Design and simulation of an a-Si:H/GaAs HBT with improved DC and high-frequency characteristics;SPIE Proceedings;2003-04-23
2. Study of a-Si:H emitters for efficient carrier injection in GaAs bipolar devices;Journal of Non-Crystalline Solids;2000-05
3. Simulation study and realisation of an a-Si:H emitter on GaAs;Solid-State Electronics;1998-10
4. A two-dimensional analytical model of homojunction GaAs BMFET structures;Solid-State Electronics;1996-08
5. A high-voltage optoelectronic GaAs static induction transistor;IEEE Electron Device Letters;1993-04
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