On the role of the atomic bond types in light emission from Si nanoparticles-Reference-Cited by-同舟云学术

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On the role of the atomic bond types in light emission from Si nanoparticles

Published:2017-05 Issue:5 Volume:7 Page:055109
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

González-Fernández A. A.¹²^ORCID,Juvert J.²³⁴,Aceves-Mijares M.¹,Dominguez-Horna C.²

Affiliation:

1. Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), 72000 Puebla, Mexico

2. Instituto de Microelectrnica de Barcelona (IMB-CNM CSIC), 08193 Barcelona, Spain

3. Photonics Research Group, INTEC, Ghent University-IMEC, 9052 Ghent, Belgium

4. Center for Nano- and Biophotonics (NB-Photonics), Ghent University, 9000 Ghent, Belgium

Funder

Consejo Nacional de Ciencia y Tecnología (CONACYT)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4983568

Reference15 articles.

1. Optical properties of silicon nanoclusters fabricated by ion implantation

2. Electroluminescent devices based on nanosilicon multilayer structures

3. Influence by Layer Structure on the Output EL of CMOS Compatible Silicon-Based Light Emitters

4. DC Electroluminescence Efficiency of Silicon Rich Silicon Oxide Light Emitting Capacitors

5. Monolithic Integration of a Silicon-Based Photonic Transceiver in a CMOS Process

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1. Enhancement of the polydimethylsiloxane (PDMS) luminescence to develop a proton scintillator;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2022-09

2. Embedded Silicon Nanoparticles as Enabler of a Novel CMOS-Compatible Fully Integrated Silicon Photonics Platform;Crystals;2021-05-31

3. Luminescence from Si-Implanted SiO2-Si3N4 Nano Bi-Layers for Electrophotonic Integrated Si Light Sources;Sensors;2019-02-19

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