Zn‐diffused laser junctions in InxGa1−xAs and InAsxP1−x grown from In solution at constant temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1661750
Reference26 articles.
1. Semiconductor diode masers of (InxGa1-x)As
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Bulk Ternary Semiconducting Compounds;Encyclopedia of Materials: Science and Technology;2001
2. Deep levels in bulk LEC single crystal IxGa1-xAs;Journal of Electronic Materials;1991-02
3. Factors Influencing the Growth of Ga0.47In0.53As on InP Substrates Using the Metalorganic Process;Journal of The Electrochemical Society;1982-02-01
4. Preparation and properties of bulk Gax In1-x As Crystals;Journal of Electronic Materials;1979-09
5. Chapter 1 Photopumped III-V Semiconductor Lasers;Semiconductors and Semimetals;1979
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