Kinetics of ion-beam-induced interfacial amorphization in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366458
Reference42 articles.
1. Atomic structure of ion implantation damage and process of amorphization in semiconductors
2. Comparison between “intermediate”- and “heavy”-ion-bombardment-induced silicon amorphization at room temperature
3. Damage induced through megavolt arsenic implantation into silicon
4. Damage formation and annealing of high energy ion implantation in Si
5. Amorphisation of solids by ion implantation
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2. Introduction to focused ion beams, ion sources, and the nano-aperture ion source;Advances in Imaging and Electron Physics Including Proceedings CPO-10;2019
3. Study of the amorphization of surface silicon layers implanted by low-energy helium ions;Crystallography Reports;2016-03
4. Medium energy ion scattering analysis of the evolution and annealing of damage and associated dopant redistribution of ultra shallow implants in Si;Radiation Effects and Defects in Solids;2009-08
5. Is there an influence of ion-beam-induced interfacial amorphization on the a/c-interface depth in silicon at common implantation energies?;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12
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