High quality silicon: Colloidal quantum dot heterojunction based infrared photodetector-Reference-Cited by-同舟云学术

High quality silicon: Colloidal quantum dot heterojunction based infrared photodetector

Published:2020-03-09 Issue:10 Volume:116 Page:101102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xiao Xiongbin¹²³^ORCID,Xu Kaimin¹,Yin Ming¹,Qiu Yu¹,Zhou Wenjia¹^ORCID,Zheng Li²^ORCID,Cheng Xinhong²³,Yu Yuehui²³,Ning Zhijun¹^ORCID

Affiliation:

1. School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China

2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

3. University of Chinese Academy of Sciences, Beijing 100049, China

Funder

Science and Technology Commission of Shanghai Municipality

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5140255

Reference27 articles.

1. Extended short wavelength infrared heterojunction phototransistors based on type II superlattices

2. Schottky junction based self-powered photodetectors and their performance modulation by multifield coupling effect

3. Fast and Sensitive Colloidal Quantum Dot Mid-Wave Infrared Photodetectors

4. Solution-processed semiconductors for next-generation photodetectors

5. Hybrid Organic/PbS Quantum Dot Bilayer Photodetector with Low Dark Current and High Detectivity

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