Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga2O3-Reference-Cited by-同舟云学术

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Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga2O3

Published:2021-04-28 Issue:16 Volume:129 Page:165702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Karjalainen A.¹²^ORCID,Weiser P. M.³^ORCID,Makkonen I.²⁴^ORCID,Reinertsen V. M.³^ORCID,Vines L.³^ORCID,Tuomisto F.¹²⁴^ORCID

Affiliation:

1. Department of Applied Physics, Aalto University, P.O. Box 15100, FI-00076 Aalto, Espoo, Finland

2. Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 Helsinki, Finland

3. Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, Blindern P.O. Box 1048, Oslo, Norway

4. Helsinki Institute of Physics, P.O. Box 64, FI-00014 Helsinki, Finland

Funder

Academy of Finland

Magnus Ehrnroothin Säätiö

The Research Council of Norway

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0042518

Reference41 articles.

1. A review of Ga2O3materials, processing, and devices

2. Recent progress on the electronic structure, defect, and doping properties of Ga2O3

3. Current status of Ga2O3power devices

4. Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3

5. Deep level defects throughout the bandgap of (010) β-Ga2O3detected by optically and thermally stimulated defect spectroscopy

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2. Defects and doping in ultra-wide band gap (Al,Ga)N and β-(Al,Ga)2O3 alloys;Journal of Materials Research;2024-08-12

3. Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in β-Ga2O3;APL Materials;2024-08-01

4. Assignments of vibrational lines to OD-impurity complexes for adventitious impurities in β-Ga2O3;APL Materials;2024-07-01

5. Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments;Materials Today Physics;2024-06

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