Depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons-Reference-Cited by-同舟云学术

Depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons

Author:

Baydin Andrey¹,Krzyzanowska Halina¹²,Dhanunjaya Munthala³,Nageswara Rao S. V. S.³,Davidson Jimmy L.⁴,Feldman Leonard C.¹⁵,Tolk Norman H.¹

Affiliation:

1. Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA

2. Maria Curie-Sklodowska University, Pl. M. Cuire-Sklodowskiej 1, 20-031 Lublin, Poland

3. School of Physics, University of Hyderabad, Hyderabad 500046, India

4. Electrical Engineering and Computer Sciences, Vanderbilt University, Nashville, Tennessee 37235, USA

5. Institute of Advanced Materials, Devices, and Nanotechnology, Rutgers University, New Brunswick, New Jersey 08901, USA

Funder

Army Research Office (ARO)

Publisher

AIP Publishing

Subject

Computer Networks and Communications,Atomic and Molecular Physics, and Optics

Link

Reference36 articles.

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