Extended x-ray absorption fine structure study of porous GaSb formed by ion implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3665643
Reference31 articles.
1. The physics and technology of gallium antimonide: An emerging optoelectronic material
2. Characteristics of implantation‐induced damage in GaSb
3. Formation of cellular defect structure on GaSb ion-implanted at low temperature
4. Ion-irradiation-induced porosity in GaSb
5. Structure in amorphous semiconductors: Extrinsic and intrinsic
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