Surface characterization of InP trenches embedded in oxide using scanning probe microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4936895
Reference37 articles.
1. Nanometre-scale electronics with III–V compound semiconductors
2. Structure of the (110) antiphase boundary in gallium phosphide
3. Epitaxial necking in GaAs grown on pre-pattemed Si substrates
4. Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique
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