Effects of O3 and H2O oxidants on C and N-related impurities in atomic-layer-deposited La2O3 films observed by in situ x-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

Effects of O3 and H2O oxidants on C and N-related impurities in atomic-layer-deposited La2O3 films observed by in situ x-ray photoelectron spectroscopy

Published:2010-08-30 Issue:9 Volume:97 Page:092904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Tae Joo,Sivasubramani Prasanna,Coss Brian E.,Kim Hyun-Chul,Lee Bongki,Wallace Robert M.,Kim Jiyoung,Rousseau Mike,Liu Xinye,Li Huazhi,Lehn Jean-Sebastien,Hong Daewon,Shenai Deo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3481377

Reference21 articles.

1. Deposition Characteristics and Annealing Effect of La[sub 2]O[sub 3] Films Prepared Using La(iPrCp)[sub 3] Precursor

2. Formation of a stratified lanthanum silicate dielectric by reaction with Si(001)

3. Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor

4. Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone

5. Al2O3 Atomic Layer Deposition with Trimethylaluminum and Ozone Studied by in Situ Transmission FTIR Spectroscopy and Quadrupole Mass Spectrometry

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