Nanobelts of the dielectric material Ge3N4
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1428634
Reference28 articles.
1. Direct laser synthesis of thin silicon and germanium nitride/oxynitride layers
2. New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing
3. Plasma‐deposited germanium nitride gate insulators for indium phosphide metal‐insulator‐semiconductor field‐effect transistors
4. A GaAs MISFET with Ge3N4 gate dielectric
5. Interface characteristics of Ge3N4-(n-type) GaAs MIS devices
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1. First-principles investigation of structural, Raman and electronic characteristics of single layer Ge3N4;Applied Surface Science;2022-01
2. Synthesis and photoluminescence of ultra-pure α-Ge 3 N 4 nanowires;Ceramics International;2018-06
3. Influence of Water on the Growth Process of Ge3N4 and InP Nanowires;Oriental Journal of Chemistry;2017-06-25
4. The electronic, optical, and thermodynamical properties of tetragonal, monoclinic, and orthorhombic M 3 N 4 ( M = Si, Ge, Sn): A first-principles study;Chinese Physics B;2017-04
5. Synthesis and luminescent properties of ternary Si–Ge–N nanowires;CrystEngComm;2016
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