Transition voltage of asymmetric H state to bend in pi cell-Reference-Cited by-同舟云学术

Transition voltage of asymmetric H state to bend in pi cell

Published:2007-07-02 Issue:1 Volume:91 Page:011103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sun Yubao,Jiang Li,Li Zaidong,Ma Hongmei,Zhang Zhidong

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2753492

Reference21 articles.

1. The pi-Cell: A Fast Liquid-Crystal Optical-Switching Device

2. T. Miyashita, P. Vetter, M. Suzuki, Y. Yamaguchi, and T. Uchida, Proceedings of the 13th International Display Research Conference (Eurodisplay’93), Strasbourg, France, August 1993 (SID, San Jose, 1993), p. 149.

3. P-136 : A Study on the Dynamic Characteristics of Bend Cell for Practical Application of OCB mode LCD

4. P-93: High Performance 17.0ʺ SVGA OCB Panel with Fast Initial Bend Transition

5. T. Konno, T. Miyashita, T. Uchida, Proceedings of the 15th International Display Research Conference (Asia display’95), Hamamatsu, Japan October 1995 (SID, San Jose, 1995), p. 581.

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