Magnetization dynamics and interface studies in ion-beam sputtered Si/CoFeB(8)/MgO(4)/CoFeB(8)/Ta(5) structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4863804
Reference18 articles.
1. Optimization of Ta thickness for perpendicular magnetic tunnel junction applications in the MgO-FeCoB-Ta system
2. Perpendicular magnetic anisotropy induced by a cap layer in ultrathin MgO/CoFeB/Nb
3. Electric-field-assisted switching in magnetic tunnel junctions
4. Electric toggling of magnets
5. Electric-field-control of magnetic anisotropy of Co0.6Fe0.2B0.2/oxide stacks using reduced voltage
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1. Enhancement of skyrmion density via interface engineering;APL Materials;2023-01-01
2. High spin mixing conductance and spin transparency in ion-beam sputtered Ta/Co60Fe20B20 bilayers on Si (100);Surfaces and Interfaces;2022-10
3. Impact of ferromagnetic layer thickness on the spin pumping in Co60Fe20B20/Ta bilayer thin films;Journal of Materials Science: Materials in Electronics;2021-04-17
4. 59Co NMR analysis of CoFeB-MgO based magnetic tunnel junctions;Journal of Alloys and Compounds;2018-04
5. Relaxation dynamics of magnetization transitions in synthetic antiferromagnet with perpendicular anisotropy;Journal of Physics: Condensed Matter;2018-03-08
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