Aligned carbon nanotubes for through-wafer interconnects
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2759989
Reference20 articles.
1. Aspect-Ratio-Dependent Copper Electrodeposition Technique for Very High Aspect-Ratio Through-Hole Plating
2. In situ transmission electron microscopy observations of 1.8μm and 180nm Cu interconnects under thermal stresses
3. Finite‐element modeling of stress distribution and migration in interconnecting studs of a three‐dimensional multilevel device structure
4. Fabrication and characterization of fine pitch on-chip copper interconnects for advanced wafer level packaging by a high aspect ratio through AZ9260 resist electroplating
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