Temperature dependence of reverse-bias leakage current in GaN Schottky diodes as a consequence of phonon-assisted tunneling
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2199980
Reference10 articles.
1. Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy
2. Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment
3. Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy
4. Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope
5. Improvement of n-GaN Schottky diode rectifying characteristics using KOH etching
Cited by 51 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Phonon-assisted leakage current of InGaN light emitting diode;Physica Scripta;2024-08-13
2. Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band;IEEE Transactions on Electron Devices;2024-08
3. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes;Journal of Applied Physics;2024-01-05
4. The isolation feature geometry dependence of reverse gate-leakage current of AlGaN/GaN HFETs;Physica Scripta;2023-08-09
5. Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation;Energies;2023-07-18
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3