Characterization of thermally nitrided silicon dioxide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93698
Reference12 articles.
1. Direct Thermal Nitridation of Silicon Dioxide Films in Anhydrous Ammonia Gas
2. Effect of Thermally Nitrided SiO2 (Nitroxide) on MOS Characteristics
3. Advantages of thermal nitride and nitroxide gate films in VLSI process
4. Use of Thin Si Crystals in Backscattering-Channeling Studies of the Si-SiO2Interface
5. Studies of the Si‐SiO2interface by MeV ion channeling
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1. Chapter 1 Silica, silicon nitride and oxynitride thin films;New Insulators, Devices and Radiation Effects;1999
2. Silicon nitride and oxynitride films;Materials Science and Engineering: R: Reports;1994-07
3. The Influence of Processes on Composition of Thermally Nitrided SiO2 Film;Journal of The Electrochemical Society;1988-12-01
4. An x‐ray photoelectron spectroscopy study of the thermal nitridation of SiO2/Si;Journal of Applied Physics;1986-07
5. An Investigation of Fixed Charge Buildup in Nitrided Oxides;Journal of The Electrochemical Society;1986-04-01
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