Electronic properties of the Cu2ZnSn(Se,S)4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods-Reference-Cited by-同舟云学术

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Electronic properties of the Cu2ZnSn(Se,S)4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods

Published:2012-06-18 Issue:25 Volume:100 Page:253905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gunawan Oki,Gokmen Tayfun,Warren Charles W.,Cohen J. David,Todorov Teodor K.,Barkhouse D. Aaron R.,Bag Santanu,Tang Jiang,Shin Byungha,Mitzi David B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4729751

Reference17 articles.

1. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

2. Electronic and optical properties of Cu2ZnSnS4 and Cu2ZnSnSe4

3. The path towards a high-performance solution-processed kesterite solar cell

4. Device characteristics of a 10.1% hydrazine-processed Cu2ZnSn(Se,S)4 solar cell

5. New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%

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4. Passivating Sn_Zn Defect and Optimizing Energy Level Alignment via Organic Silicon Salt Incorporation toward Efficient Solution‐Processed CZTSSe Solar Cells;Advanced Functional Materials;2023-12-06

5. Proton radiation hardness and its loss mechanism of Cu2ZnSn(S,Se)4 thin film solar cells;Applied Physics Letters;2023-12-04

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