Nanoscale study of the current transport through transrotational NiSi/n-Si contacts by conductive atomic force microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4773488
Reference19 articles.
1. Towards implementation of a nickel silicide process for CMOS technologies
2. Structural and electrical characterization of silicided Ni/Au contacts formed at low temperature (<300 °C) on p-type [001] silicon
3. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
4. Diffusion layers and the Schottky-barrier height in nickel silicide—silicon interfaces
5. Low temperature formation and evolution of a 10 nm amorphous Ni–Si layer on [001] silicon studied by in situ transmission electron microscopy
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