Exciton line broadening in ZnSxSe1−xepilayers grown on GaAs by molecular‐beam epitaxy

Author:

Newbury P. R.,Shahzad K.,Petruzzello J.,Cammack D. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 40 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Raman monitoring of ZnSe and ZnSxSe1−x nanocrystals formed in SiO2 by ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-11

2. Influence of γ-irradiation on optical parameters of electron beam evaporated ZnSe1−xTexnanocrystalline thin films;Radiation Effects and Defects in Solids;2013-06-26

3. Microstructure and optical studies of electron beam evaporated ZnSe1−xTex nanocrystalline thin films;Journal of Alloys and Compounds;2012-08

4. Nonradiative electron-hole recombination in ZnSSe epitaxial layers examined by piezoelectric photothermal spectroscopy;Journal of Materials Science: Materials in Electronics;2003

5. The optical dielectric function of ZnO;Applied Physics A: Materials Science & Processing;2003-01-01

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