Real-time visualization of GaN/AlGaN high electron mobility transistor failure at off-state
Author:
Affiliation:
1. Department of Mechanical and Nuclear Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
2. Air Force Research Laboratory, 2941 Hobson Way, Wright-Patterson AFB, Ohio 45433, USA
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5046178
Reference21 articles.
1. The 2018 GaN power electronics roadmap
2. GaN HEMT reliability
3. Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress
4. OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown
5. Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress
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