Nonlinear UV absorption properties of bulk 4H-SiC
Author:
Affiliation:
1. Pulsed Power and Power Electronics Laboratory, Department of Electrical and Computer Engineering, Texas Tech University, 1012 Boston Ave., Lubbock, Texas 79409, USA
Funder
Office of Naval Research (ONR)
Air Force Office of Scientific Research (AFOSR)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4978768
Reference20 articles.
1. Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths
2. Fundamental band edge absorption in nominally undoped and doped 4H‐SiC
3. Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å
4. C. Hettler , “ Investigation and evaluation of high voltage silicon carbide photoconductive switches,” Ph.D. dissertation ( Texas Tech University, 2009).
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1. A highly sensitive filterless narrowband 4H-SiC photodetector employing a charge narrowing strategy;Journal of Physics D: Applied Physics;2023-06-16
2. Highly efficient UV detection in a metal–semiconductor–metal detector with epigraphene;Applied Physics Letters;2022-05-09
3. 550-W Ultraviolet Exciplex Source for Pulsed Power Applications;IEEE Transactions on Plasma Science;2019-01
4. Enhanced irradiance sensitivity of 4H-SiC based ultraviolet sensor introducing laterally gated Al/SiO2/SiC tunnel diode structure with low gate bias;Journal of Applied Physics;2018-07-14
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