Interface trapping in (2¯01) β-Ga2O3 MOS capacitors with deposited dielectrics
Author:
Affiliation:
1. Department of Physics, Auburn University, Auburn, Alabama 36849, USA
2. School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
Funder
Auburn University
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5019270
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4. Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method
5. High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth
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