Influence of the cooling scheme on the performance and presence of carrier traps for CdMnTe detectors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4817869
Reference12 articles.
1. Defect levels of semi-insulating CdMnTe:In crystals
2. Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements
3. Systematic modelling and comparisons of capacitance and current-based microscopic defect analysis techniques for measurements of high-resistivity silicon detectors after irradiation
4. Size and distribution of Te inclusions in THM as-grown CZT wafers: The effect of the rate of crystal cooling
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2. Effect of doping and annealing on resistivity, mobility-lifetime product, and detector response of (Cd,Mn)Te;Journal of Alloys and Compounds;2023-03
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