Growth and characterization of PbSe and Pb1−xSnxSe on Si (100)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369369
Reference9 articles.
1. Growth of high quality epitaxial PbSe onto Si using a (Ca,Ba)F2buffer layer
2. Photovoltaic infrared sensors in heteroepitaxial PbTe on Si
3. Heteroepitaxial Pb1−xSnxSe on Si infrared sensor array with 12 μm cutoff wavelength
4. Finite-element modeling predicts possibility of thermoelectrically cooled lead-salt diode lasers
5. Structure of epitaxial PbSe grown on Si(111) and Si(100) without a fluoride buffer layer
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