Magnesium incorporation at (0001) inversion domain boundaries in GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1565707
Reference19 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. Characterization of OMVPE-Grown AlGaInN Heterostructures
3. Hole conductivity and compensation in epitaxial GaN:Mg layers
4. Influence of microstructure on the carrier concentration of Mg-doped GaN films
5. Structural Defects and Relation with Optoelectronic Properties in Highly Mg-Doped GaN
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