Interpretation of dc characteristics of phosphorus‐doped polycrystalline silicon films: Conduction across low‐barrier grain boundaries
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332643
Reference15 articles.
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1. Igniters and temperature sensors for a micro-scale combustion system;Sensors and Actuators A: Physical;2003-01
2. Electrical Properties;Polycrystalline Silicon for Integrated Circuits and Displays;1998
3. An analytical model for 1/f noise in polycrystalline silicon thin films;IEEE Transactions on Electron Devices;1990-03
4. On the Temperature Dependence of Majority Carrier Transport in Heavily Arsenic‐Doped Polycrystalline Silicon Thin Films;Journal of The Electrochemical Society;1989-03-01
5. Electrical Properties;Polycrystalline Silicon for Integrated Circuit Applications;1988
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