Reaching state-of-the art requirements for MIM capacitors with a single-layer anodic Al2O3 dielectric and imprinted electrodes
Author:
Affiliation:
1. NCSR Demokritos, Institute of Nanoscience and Nanotechnology (INN), Terma Patriarchou Grigoriou, Aghia Paraskevi, 15341 Athens, Greece
Funder
Greek national project
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4993898
Reference16 articles.
1. High performance metal-insulator-metal capacitor using a SrTiO3/ZrO2 bilayer
2. RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications
3. Improvement of Voltage Linearity in High-<tex>$kappa$</tex>MIM Capacitors Using<tex>$hbox HfO_2hbox --hbox SiO_2$</tex>Stacked Dielectric
4. Full ALD Al2O3/ZrO2/SiO2/ZrO2/Al2O3Stacks for High-Performance MIM Capacitors
5. Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al2O3/ZrO2/SiO2 nano-stacks
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