Experimental study of self‐heating in undoped polycrystalline silicon thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346770
Reference11 articles.
1. Determination of gap state density in polycrystalline silicon by field‐effect conductance
2. High‐performance thin‐film transistors from optimized polycrystalline silicon films
3. Low defect-density polycrystalline silicon for high performance thin film transistors
4. Material properties and characteristics of polysilicon transistors for large area electronics
5. Field-effect analysis for the determination of gap-state density and Fermi-level temperature dependence in polycrystalline silicon
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors;Microelectronics Reliability;2005-02
2. Low frequency noise in intrinsic low pressure chemical vapour deposited polysilicon resistors;The European Physical Journal Applied Physics;1998-09
3. Leakage current of undoped LPCVD polycrystalline silicon thin-film transistors;IEEE Transactions on Electron Devices;1995-05
4. Optoelectronic properties of polycrystalline silicon produced by low-temperature (600°C) solid-phase crystallization of hydrogenated amorphous silicon;Philosophical Magazine B;1994-03
5. Polysilicon thin Films and Devices Produced by Low-Temperature (600°C) Furnace Crystallisation of Hydrogenated Amorphous Silicon (a-Si:H);MRS Proceedings;1992
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