Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers-Reference-Cited by-同舟云学术

Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers

Author:

Kato Masashi¹²³^ORCID,Asada Takato¹,Maeda Takuto¹,Ito Kenji⁴,Tomita Kazuyoshi⁴^ORCID,Narita Tetsuo⁴^ORCID,Kachi Tetsu²

Affiliation:

1. Department of Electric and Mechanical Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan

2. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan

3. Frontier Research institute for Materials Science, Nagoya Institute of Technology, Nagoya 466-8555, Japan

4. Toyota Central R&D Labs., Inc., Yokomichi41-1, Nagakute 480-1192, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference42 articles.

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献