Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3589370
Reference21 articles.
1. Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well
2. Nonpolar and Semipolar Group III Nitride-Based Materials
3. Strain-induced polarization in wurtzite III-nitride semipolar layers
4. Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance
5. Improved electroluminescence on nonpolarm -plane InGaN/GaN quantum wells LEDs
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