InGaAs/InP quantum well intermixing studied by cross-sectional scanning tunneling microscopy-Reference-Cited by-同舟云学术

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InGaAs/InP quantum well intermixing studied by cross-sectional scanning tunneling microscopy

Published:2001-05 Issue:9 Volume:89 Page:4815-4823
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chen Huajie,McKay H. A.,Feenstra R. M.,Aers G. C.,Poole P. J.,Williams R. L.,Charbonneau S.,Piva P. G.,Simpson T. W.,Mitchell I. V.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1361237

Reference25 articles.

1. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures

2. Quantum‐well intermixing for optoelectronic integration using high energy ion implantation

3. Cross-sectional scanning tunnelling microscopy of III-V semiconductor structures

4. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy

5. Enhanced group-V intermixing in InGaAs/InP quantum wells studied by cross-sectional scanning tunneling microscopy

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1. Impurity Free Vacancy Disordering (IFVD) of InGaAs/AlGaAs Quantum Well Laser Structures;ECS Journal of Solid State Science and Technology;2017

2. Local emission spectroscopy of surface micrograins in AIIIBV semiconductors;Semiconductors;2016-07

3. High-resolution X-ray diffractometry and transmission electron microscopy as applied to the structural study of InAlAs/InGaAs/InAlAs multilayer transistor nanoheterostructures;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2016-05

4. Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers;Nanoscale Research Letters;2015-12

5. Inherent limits on optimization and discovery in physical systems;Annals of Physics;2014-12

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